STGD19N40LZ datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STGD19N40LZ

4/17

DocID024506 Rev 6

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

VCES(clamped)

Collector emitter

clamped voltage

(VGE = 0)

IC = 2 mA

390

IC = 2 mA, TJ = - 40 °C to 175 °C

365

425

V(BR)ECS

Emitter collector

break-down

voltage (VGE = 0)

IC = 75 mA

IC = 75 mA, TJ = - 40 °C to 175 °C

VGE(clamped)

Gate emitter

clamped voltage

IG = ±2 mA

TJ = - 40 °C to 175 °C

ICES

Collector cut-off

current

(VGE = 0)

VCE = 15 V, TJ = 175 °C

µA

VCE = 200 V, TJ = 175 °C

100

µA

IGES

Gate-emitter

leakage current

(VCE = 0)

VGE = ±10 V

625

µA

VGE = ±10 V,

TJ = - 40 °C to 175 °C

450

830

µA

RGE

Gate emitter

resistance

0 < VGE < VGE (clamped)

Gate resistance

1.6

VGE(th)

Gate threshold

voltage

VGE =VCE, IC = 1 mA, TJ = - 40 °C 1.75

2.3

2.9

VGE =VCE, IC = 1 mA

1.55

2.0

2.6

VGE =VCE, IC = 1 mA, TJ = 175 °C 1.05

1.4

2.0

VCE(sat)

Collector emitter

saturation voltage

VGE = 4.5 V, IC = 10 A

1.5

VGE = 4.5 V, IC = 10 A,

TJ = - 40 °C to 175 °C

1.85

VGE = 3.8 V, IC = 6 A

1.35

VGE = 3.8 V, IC = 6 A,

TJ = - 40 °C to 175 °C

1.65

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