STGD19N40LZ datasheet(3/17 Pages) STMICROELECTRONICS

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STGD19N40LZ

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (vGE = 0)

VCES(clamped)

VECS

Emitter collector voltage (VGE = 0)

(1)

Calculated according to the iterative formula

Collector current (continuous) at TC = 100 °C

ICP

(2)

Pulse width limited by max. junction temperature allowed

Pulsed collector current

VGE

Gate-emitter voltage

VGE(clamped)

PTOT

Total dissipation at TC = 25 °C

125

ESCIS

(3)

For ESCIS test circuit refer to Figure 16. (Inductive load switching), with A and B not connected.

Single pulse energy TC = 25 °C, L = 3 mH, VCC = 50 V

300

Single pulse energy TC =150 °C, L = 3 mH, VCC = 50 V

180

ISCIS

Avalanche current TC = 25 °C, L = 3 mH, VCC = 50 V

13.1

Avalanche current TC = 150 °C, L = 3 mH, VCC = 50 V

10.2

ESD

Human body model, R = 1.5 k

Ω, C = 100 pF

Machine model, R = 0, C = 100 pF

800

Charged device model

TSTG

Storage temperature

– 55 to 175

°C

Operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.2

°C/W

Rthj-amb

Thermal resistance junction-ambient device in free air

100

°C/W

C TC

()

jmax

() TC

–

thj

–

CE sat

() max

() Tjmax

() IC TC

()

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