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STGD19N40LZ 数据表(PDF) 1 Page - STMicroelectronics |
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STGD19N40LZ 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. October 2016 DocID024506 Rev 6 1/17 STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Figure 1. Internal schematic diagram Features • AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Applications • Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. DPAK 1 3 TAB C (2 or TAB) E (3) G (1) RG RGE SC30180 Table 1. Device summary Order code Marking Packages Packing STGD19N40LZ GD19N40LZ DPAK Tape and reel www.st.com |
类似零件编号 - STGD19N40LZ |
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类似说明 - STGD19N40LZ |
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