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STGFW20V60DF 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGFW20V60DF
功能描述  Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGFW20V60DF 数据表(HTML) 9 Page - STMicroelectronics

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STGFW20V60DF
Electrical characteristics
DocID026148 Rev 2
9/15
Figure 20: Reverse recovery current vs. diode
current slope
Figure 21: Reverse recovery time vs. diode current
slope
Figure 22: Reverse recovery charge vs. diode
current slope
Figure 23: Reverse recovery energy vs. diode
current slope
AM17190v1
0
10
20
30
40
50
0
500
1000
1500
2000
2500
Irm(A)
di/dt (A/µs)
Vr = 400V, IF= 20 A
TJ=25°C
TJ=175°C
AM17191v1
0
20
40
60
80
100
120
140
160
180
0
500
1000
1500
2000
2500
trr (µs)
di/dt (A/µs)
Vr = 400V, IF= 20 A
TJ=25°C
TJ=175°C
AM17192v1
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
2000
2500
Qrr (nC)
di/dt (A/µs)
Vr = 400V,IF= 20 A
TJ=25°C
TJ=175°C
AM17193v1
0
100
200
300
400
500
600
700
800
0
500
1000
1500
2000
2500
Err (µJ)
di/dt (A/µs)
Vr = 400 V, IF= 20 A
TJ=25°C
TJ=175°C



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