February 2017

DocID026148 Rev 2

1/15

This is information on a product in full production.

www.st.com

STGFW20V60DF

Trench gate field-stop IGBT, V series

600 V, 20 A very high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features





Very high speed switching series



Tail-less switching off





Tight parameters distribution



Safe paralleling



Low thermal resistance



Very fast soft recovery antiparallel diode



Lead free package

Applications



Photovoltaic inverters



Uninterruptible power supply



Welding



Power factor correction



Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the V series

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGFW20V60DF

G20V60DF

TO-3PF

Tube

1

2

3

TO-3PF

C (2)

G (1)

E (3)

Sc12850_no_tab