STGFW20V60DF datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STGFW20V60DF

功能描述	Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 15 page

STGFW20V60DF

Electrical ratings

DocID026148 Rev 2

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s, TC = 25 °C)

3.5

PTOT

Total dissipation at TC = 25 °C

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

Notes:

(1)Pulse width is limited by maximum junction temperature.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

2.9

°C/W

RthJC

Thermal resistance junction-case diode

3.4

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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