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STGFW20V60DF 数据表(PDF) 5 Page - STMicroelectronics |
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STGFW20V60DF 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STGFW20V60DF Electrical characteristics DocID026148 Rev 2 5/15 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 20 A, VGE = 15 V (see Figure 27: " Test circuit for inductive load switching" ) - 38 - ns tr Current rise time - 10 - ns (di/dt)on Turn-on current slope - 1556 - A/µs td(off) Turn-off-delay time - 149 - ns tf Current fall time - 15 - ns Eon(1) Turn-on switching energy - 200 - µJ Eoff(2) Turn-off switching energy - 130 - µJ Ets Total switching energy - 330 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 20 A, VGE = 15 V, TJ = 175 °C (see Figure 27: " Test circuit for inductive load switching" ) - 37 - ns tr Current rise time - 12 - ns (di/dt)on Turn-on current slope - 1340 - A/µs td(off) Turn-off-delay time - 150 - ns tf Current fall time - 23 - ns Eon(1) Turn-on switching energy - 430 - µJ Eoff(2) Turn-off switching energy - 210 - µJ Ets Total switching energy - 640 - µJ Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 20 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 27: " Test circuit for inductive load switching") - 40 ns Qrr Reverse recovery charge - 320 nC Irrm Reverse recovery current - 16 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 910 A/µs Err Reverse recovery energy - 115 µJ trr Reverse recovery time IF = 20 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 1000 A/µs (see Figure 27: " Test circuit for inductive load switching") - 72 ns Qrr Reverse recovery charge - 930 nC Irrm Reverse recovery current - 26 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 530 A/µs Err Reverse recovery energy - 307 µJ |
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