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STLED325 数据表(PDF) 42 Page - STMicroelectronics |
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STLED325 数据表(HTML) 42 Page - STMicroelectronics |
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42 / 62 page ![]() KEY matrix and key-input data storage RAM STLED325 42/62 Doc ID 17576 Rev 1 6 KEY matrix and key-input data storage RAM The key matrix is of 8x2 configuration, as shown below: Figure 15. KEY matrix and key-input data storage RAM The data of each key are stored as illustrated below, and are read by the appropriate read command, starting from the least significant bit. All the front panel keys can be configured as hot keys using the “configuration mode setting command”. Alternatively, any number of keys out of 16 keys can be programmed for hot key functions by using the hot-key setting command. It is recommended to read the hot key values immediately upon STBY de-assertion. If they are not read within the guard preset timer value, the hot key data are cleared. It is recommended to have 10 K Ω pull down resistors on the KEY1 and KEY2 input pins and the output SEG/KS pins can see a maximum load of 300pF. This load condition is important for the key dis-charge cycle time. Key 1 Key 2 Key 1 Key 2 Key 1 Key 2 Key 1 Key 2 Seg1 KS1 Seg2 KS2 Seg3 KS3 Seg4 KS4 Seg5 KS5 Seg6 KS6 Seg7 KS7 Seg8 KS8 b0 b1 b2 b3 b4 b5 b6 b7 |
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