L6718 datasheet(22/71 Pages) STMICROELECTRONICS

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Electrical specifications

L6718

22/71

DocID023399 Rev 3

kIMON

IMON accuracy (MPhase)

IINFOx=0 μA; N=4;

RG=810 Ω; RFB=2.125 kΩ

-1.5

1.5

μA

IINFOx=20 μA; N=4;

RG=810 Ω; RFB=2.125 kΩ

-2

μA

kSIMON

SIMON accuracy

(SPhase)

ISCSN=0 μA;

RG=1.1 kΩ; RFB=6.662 kΩkΩ

-0.75

0.75

μA

ISCSN=20 μA;

RG=1.1 kΩ; RFB=6.662

-1

μA

EA DC gain

100

Slew rate

COMP, SCOMP to GND = 10 pF

μs

DVID

Slew rate fast

Multi-phase section

mV/

μs

Slew rate slow

2.5

mV/

μs

DVID

Slew rate fast

Single-phase section

mV/

μs

Slew rate slow

2.5

mV/

μs

IMON ADC

GetReg(15h)

VIMON = 0.992 V

Hex

Accuracy

Hex

PWM OUTPUTS

PWM3 /

SPWM

Output high

I = 1 mA

Output low

I = -1 mA

0.2

IPWM3,IPWM4 Pull-up current

μA

Protection (both sections)

OVP

Overvoltage protection

VSEN rising; wrt Ref.

+175

VSEN rising; wrt Ref.

+500

UVP

Undervoltage protection

VSEN falling; wrt Ref; Ref > 500 mV

-500

FBR DISC

FB disconnection

Vcs - rising above VSEN/SVSEN

+700

FBG DISC

FBG disconnection

EA NI input wrt VID

+500

VREADY,

SVREADY,

VRHOT

Voltage low

I = - 4 mA

0.4

VOC_TOT

Overcurrent threshold

VIMON, VSIMON rising

1.70

1.55

IOC_TH

Constant current

μA

VRHOT

Voltage low

ISINK = -5 mA

Gate drives control

tRISE_UGATE High-side rise time

BOOTx - PHASEx =7 V

CUGATE to GND=3.3 nF

Table 5. Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

L6718 数据表(PDF) 22 Page - STMicroelectronics

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