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STM8L151C2 数据表(PDF) 61 Page - STMicroelectronics |
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STM8L151C2 数据表(HTML) 61 Page - STMicroelectronics |
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61 / 122 page  DocID018780 Rev 9 61/122 STM8L151x2, STM8L151x3 Electrical parameters 102 Figure 12. Typ. IDD(RUN) vs. VDD, fCPU = 16 MHz 1. Typical current consumption measured with code executed from RAM 4. The run from RAM consumption can be approximated with the linear formula: IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA 5. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 30. 6. Tested in production. 7. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 8. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 31. |
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