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STM32F101XF 数据表(PDF) 39 Page - STMicroelectronics |
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STM32F101XF 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 117 page ![]() DocID16553 Rev 5 39/117 STM32F101xF, STM32F101xG Electrical characteristics 5.3 Operating conditions 5.3.1 General operating conditions 5.3.2 Operating conditions at power-up / power-down The parameters given in Table 11 are derived from tests performed under the ambient temperature condition summarized in Table 10. Table 10. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 36 MHz fPCLK1 Internal APB1 clock frequency - 0 36 fPCLK2 Internal APB2 clock frequency - 0 36 VDD Standard operating voltage - 2 3.6 V VDDA(1) 1. When the ADC is used, refer to Table 56: ADC characteristics. Analog operating voltage (ADC not used) Must be the same potential as VDD(2) 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 23.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage - 1.8 3.6 V PD Power dissipation at TA = 85 °C(3) 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 6.4: Thermal characteristics). LQFP144 - 666 mW LQFP100 - 434 LQFP64 - 444 TA Ambient temperature Maximum power dissipation –40 85 °C low-power dissipation(4) 4. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 6.4: Thermal characteristics). –40 105 °C TJ Junction temperature range - –40 105 °C Table 11. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 20 ∞ |
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