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STR710FZ1 数据表(PDF) 47 Page - STMicroelectronics |
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STR710FZ1 数据表(HTML) 47 Page - STMicroelectronics |
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47 / 80 page ![]() STR71xFxx STR710RZ Electrical parameters Doc ID 10350 Rev 13 47/80 4.3.3 Memory characteristics Flash memory V33 = 3.0 to 3.6V, TA = -40 to 85 °C unless otherwise specified. Notes: 1. TA=45°C after 0 cycles. Guaranteed by characterization, not tested in production. 2. Guaranteed by design, not tested in production Table 22. Flash memory characteristics Symbol Parameter Test conditions Value Unit Min. Typ Max1) tPW Word Program 40 μs tPDW Double Word Program 60 μs tPB0 Bank 0 Program (256K) Double Word Program 1.6 2.1 s tPB1 Bank 1 Program (16K) Double Word Program 130 170 ms tES Sector Erase (64K) Not preprogrammed Preprogrammed 2.3 1.9 4.0 3.3 s tES Sector Erase (8K) Not preprogrammed Preprogrammed 0.7 0.6 1.1 1.0 s tES Bank 0 Erase (256K) Not preprogrammed Preprogrammed 8.0 6.6 13.7 11.2 s tES Bank 1 Erase (16K) Not preprogrammed Preprogrammed 0.9 0.8 1.5 1.3 s tRPD 2) Recovery when disabled 20 μs tPSL 2) Program Suspend Latency 10 μs tESL 2) Erase Suspend Latency 300 μs NEND_B0 Endurance (Bank 0 sectors) 10 kcycles NEND_B1 Endurance (Bank 1 sectors) 100 kcycles tRET Data Retention (Bank 0 and Bank 1) TA=85° 20 Years tESR Erase Suspend Rate Min time from Erase Resume to next Erase Suspend 20 ms |
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