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BQ40Z50-R2 数据表(PDF) 12 Page - Texas Instruments

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部件名 BQ40Z50-R2
功能描述  1-Series, 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager
PDF  51 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

BQ40Z50-R2 数据表(HTML) 12 Page - Texas Instruments

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bq40z50-R2
SLUSCS4 – JUNE 2017
www.ti.com
Product Folder Links: bq40z50-R2
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
ADC (continued)
Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(2)
For VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3, VC4–VSS, PACK–VSS, and VREF1/2, the offset error is multiplied by (1/ADC
multiplexer scaling factor (K)).
Offset error(2)
16-bit, Post-calibration, VFS = VREF1
±67
±157
µV
Offset error drift
16-bit, Post-calibration, VFS = VREF1
0.6
3
µV/°C
Gain error
16-bit, –0.1 V to 0.8 × VFS
±0.2%
±0.8%
FSR
Gain error drift
16-bit, –0.1 V to 0.8 × VFS
150
PPM/°C
Effective input resistance
8
7.17 ADC Digital Filter
Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Conversion time
Single conversion
31.25
ms
Single conversion
15.63
Single conversion
7.81
Single conversion
1.95
Resolution
No missing codes
16
Bits
Effective resolution
With sign, tCONV = 31.25 ms
14
15
Bits
With sign, tCONV = 15.63 ms
13
14
With sign, tCONV = 7.81 ms
11
12
With sign, tCONV = 1.95 ms
9
10
7.18 CHG, DSG FET Drive
Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output voltage
ratio
RatioDSG = (VDSG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V,
10 MΩ between PACK and DSG
2.133
2.333
2.433
RatioCHG = (VCHG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V,
10 MΩ between BAT and CHG
2.133
2.333
2.433
V(FETON)
Output voltage,
CHG and DSG on
VDSG(ON) = VDSG – VBAT, VBAT ≥ 4.92 V, 10 MΩ between
PACK and DSG, VBAT = 18 V
10.5
11.5
12
V
VCHG(ON) = VCHG – VBAT, VBAT ≥ 4.92 V, 10 MΩ between
BAT and CHG, VBAT = 18 V
10.5
11.5
12
V(FETOFF)
Output voltage,
CHG and DSG off
VDSG(OFF) = VDSG – VPACK, 10 MΩ between PACK and
DSG
–0.4
0.4
V
VCHG(OFF) = VCHG – VBAT, 10 MΩ between BAT and CHG
–0.4
0.4
tR
Rise time
VDSG from 0% to 35% VDSG(ON)(TYP), VBAT ≥ 2.2 V, CL =
4.7 nF between DSG and PACK, 5.1 kΩ between DSG
and CL, 10 MΩ between PACK and DSG
200
500
µs
VCHG from 0% to 35% VCHG(ON)(TYP), VBAT ≥ 2.2 V, CL =
4.7 nF between CHG and BAT, 5.1 kΩ between CHG
and CL, 10 MΩ between BAT and CHG
200
500
tF
Fall time
VDSG from VDSG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7 nF
between DSG and PACK, 5.1 kΩ between DSG and CL,
10 MΩ between PACK and DSG
40
300
µs
VCHG from VCHG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7
nF between CHG and BAT, 5.1 kΩ between CHG and
CL, 10 MΩ between BAT and CHG
40
200



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