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7782 数据表(PDF) 49 Page - STMicroelectronics

部件名 7782
功能描述  32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PDF  63 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

7782 数据表(HTML) 49 Page - STMicroelectronics

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M58CR032C, M58CR032D
Table 31. CFI Query System Interface Information
Table 32. Device Geometry Definition
Offset
Data
Description
Value
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
1Dh
0017h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Eh
00C0h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
12V
1Fh
0004h
Typical time-out per single Byte/Word program = 2n µs
16µs
20h
0003h
Typical time-out for Quadruple Word Program = 2n µs
8µs
21h
000Ah
Typical time-out per individual Block Erase = 2n ms
1s
22h
0000h
Typical time-out for full Chip Erase = 2n ms
NA
23h
0003h
Maximum time-out for Word Program = 2n times typical
128µs
24h
0004h
Maximum time-out for Quadruple Word = 2n times typical
128µs
25h
0002h
Maximum time-out per individual Block Erase = 2n times typical
4s
26h
0000h
Maximum time-out for Chip Erase = 2n times typical
NA
Offset Word
Mode
Data
Description
Value
27h
0016h
Device Size = 2n in number of Bytes
4 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of Bytes in multi-Byte program or page = 2n
8 Byte
2Ch
0002h
Number of Erase Block Regions within the device
bit 7 to 0 = x = number of Erase Block Regions
It specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size.
2



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