TGA4548-SM-R datasheet(7/12 Pages) TRIQUINT

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TGA4548-SM

17 – 20 GHz 10 W GaN Power Amplifier

Data Sheet Rev. C, April 24, 2017 | Subject to change without notice

7 of 12

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Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (θJC) (1)

Tbaseplate = +85 °C, VD = +28 V, ID = 300 mA,

PDISS = 8.4 W

3.57

ºC/W

Channel Temperature, TCH (IDQ)

115

°C

Median Lifetime (TM)

5.7 x 1011

Hrs

Thermal Resistance (θJC) (1)

Tbaseplate = +85 °C, VD = +28 V, ID = 1050 mA,

POUT = 40 dBm,

PDISS = 19.4 W

3.61

ºC/W

Channel Temperature, TCH (Under RF)

155

°C

Median Lifetime (TM)

4.9 x 109

Hrs

Notes:

Channel operating temperature will directly affect the device median lifetime (Tm). For maximum life, it is recommended that

the channel temperatures be maintained at the lowest possible levels.

Median Lifetime

Test Conditions: VD = +28 V; Failure Criteria is 10% reduction in ID_MAX

1E+04

1E+05

1E+06

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1E+13

1E+14

1E+15

100

125

150

175

200

225

250

275

Channel Temperature, TCH (°C)

Median Lifetime vs. TCH

FET16

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