TGA4548-SM

17 – 20 GHz 10 W GaN Power Amplifier

Data Sheet Rev. C, April 24, 2017 | Subject to change without notice

2 of 12

www.qorvo.com

Recommended Operating Conditions

Parameter

Min

Typ

Max

Units

+28

V

Operating Temp. Range

−40

+25

+85

°C

300

mA

−2.6

V

930

mA

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Absolute Maximum Ratings

Parameter

Rating

29.5 V

-8 to 0 V

RF Input Power, CW, 50  , T=25 °C

26 dBm

45 W

Storage Temperature

−55 to +150 °C

Mounting Temperature (30 seconds)

320 °C

275 °C

500 mA

500 mA

2 A

3 mA

12 mA

48 mA

4 mA

4 mA

Exceeding any one or a combination of the Absolute Maximum Rating

conditions may cause permanent damage to the device. Extended

application of Absolute Maximum Rating conditions to the device may

reduce device reliability.

Electrical Specifications

Parameter

Conditions 

(1)

Min

Typ

Max

Units

Operational Frequency Range

17

20

GHz

Small Signal Gain

27

dB

Input Return Loss

17

dB

Output Return Loss

10

dB

Output Power at Saturation, Psat

41

dBm

Power Added Efficiency, PAE

Pin = 12 dBm, 17.7 GHz

Pin = 12 dBm, 18.5 GHz

Pin = 12 dBm, 19.7 GHz

34

34

28

%

Third Order Intermodulation, IM3

Pout = +34 dBm/tone

−25

dBc

Gain Temperature Coefficient

−0.054

dB/°C

Power Temperature Coefficient

−0.041

dBm/°C

Notes:

1.

Test conditions unless otherwise noted: VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, VG1 = VG2 = VG3 = −2.6V typical,

Temp = +25 °C, Z0 = 50