| 制造商 | 部件名 | 数据表 | 功能描述 |
STMicroelectronics
|
SCTW40N120G2V |
205Kb/12P |
Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package
Rev 2 - June 2021 |
| STEVAL-ILL066V2 |
683Kb/12P |
100 W LED street lighting evaluation board using the STLUX385A digital controller
Rev 1 - March 2018 |
| ALED6000 |
4Mb/45P |
Automotive 3 A single channel LED driver with integrated DC-DC converter
October 2021 Rev 4 |
| X-NUCLEO-LED16A1 |
309Kb/5P |
16 channel LED driver expansion board based on LED1642GW for STM32 Nucleo
December 2016 Rev 1 |
| ALED6001 |
460Kb/26P |
Automotive-grade PWM-dimmable single channel LED driver with integrated boost controller
November 2015 Rev 2 |
| AN4346 |
1Mb/33P |
10 W wide range - high power factor - isolated LED driver using HVLED815PF |
| AN4350 |
1Mb/34P |
High power factor LED driver with constant voltage regulation based on HVLED815PF |
| AN3339 |
1Mb/44P |
185 W power supply with PFC and standby supply for LED TV |
| X-NUCLEO-LED61A1 |
568Kb/4P |
DC-DC LED driver expansion board based on LED6001 for STM32 Nucleo
December 2015 Rev 1 |
| STG35M120F3D7 |
184Kb/9P |
1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing
DS12463 - Rev 1 - February 2018 |
| STG15M120F3D7 |
263Kb/10P |
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
Rev 3 - August 2022 |
| STB100N6F7 |
555Kb/15P |
N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package
January 2015 Rev 2 |
| STGF10M65DF2 |
989Kb/17P |
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package
April 2017 |
| SCTH35N65G2V-7 |
378Kb/15P |
Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 45 A in an H2PAK-7 package
Rev 5 - December 2020 |
| STP200N3LL |
681Kb/13P |
N-channel 30 V, 2.15 m(ohm) typ., 120 A Power MOSFET in a TO-220 package
July 2016 Rev 2 |
| STG15M120F3D8 |
224Kb/8P |
1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing
Rev 1 - January 2022 |
| STG50M120F3D7 |
243Kb/10P |
Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
Rev 2 - August 2022 |
| SCTWA90N65G2V |
249Kb/12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package
Rev 2 - August 2020 |
| STB24N60M6 |
445Kb/16P |
N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D짼PAK
Rev 1 - August 2018 |
| STD18N60M6 |
534Kb/16P |
N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package
April 2019 Rev 2 |
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