Features
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 50 mΩ
• IDS(max) = 30 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small 7.0 x 8.4 mm2 PCB footprint
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant

Applications
• AC-DC Converters
• DC-DC Converters
• Bridgeless Totem Pole PFC
• Inverters
• Energy Storage Systems
• On Board Battery Chargers
• Uninterruptable Power Supplies
• Solar Energy
• Industrial Motor Drives
• Appliances
• Laser Drivers
• Wireless Power Transfer

Description
The GS66508B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.