GS66508B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

© 2009-2020 GaN Systems Inc.

4

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Electrical Characteristics cont’d (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters

Sym. Min. Typ. Max. Units Conditions

Turn-On Delay

tD(on)

4.1

ns

VDD = 400 V, VGS = 0-6 V

IDS = 16 A, RG(ext) = 5 Ω

TJ = 25 °C (Note 6)

Rise Time

tR

3.7

ns

Turn-Off Delay

tD(off)

8

ns

Fall Time

tF

5.2

ns

Turn-On Delay

tD(on)

4.3

ns

VDD = 400 V, VGS = 0-6 V

IDS = 16 A, RG(ext) = 5 Ω

TJ =125 °C (Note 6)

Rise Time

tR

4.9

ns

Turn-Off Delay

tD(off)

8.2

ns

Fall Time

tF

3.4

ns

Output Capacitance Stored Energy

EOSS

8

µJ

VDS = 400 V

VGS = 0 V, f = 100 kHz

Switching Energy during turn-on

Eon

47.5

µJ

VDS = 400 V, IDS = 15 A

VGS = 0 - 6 V, RG(on) = 10

Ω

RG(off) = 1

Ω, L = 40 µH

LP = 2 nH (Notes 7, 8)

Switching Energy during turn-off

Eoff

8

µJ

(6) See Figure 16 for timing test circuit diagram and Figure 17 for definition waveforms

(7) LP = parasitic inductance

(8) See Figure 18 for switching test circuit