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GS66508B 数据表(PDF) 5 Page - GaN Systems Inc. |
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GS66508B 数据表(HTML) 5 Page - GaN Systems Inc. |
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5 / 16 page ![]() GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Rev 200402 © 2009-2020 GaN Systems Inc. 5 Submit datasheet feedback Electrical Performance Graphs IDS vs. VDS Characteristic IDS vs. VDS Characteristic Figure 1: Typical IDS vs. VDS @ TJ = 25 ⁰C Figure 2: Typical IDS vs. VDS @ TJ = 150 ⁰C RDS(on) vs. IDS Characteristic RDS(on) vs. IDS Characteristic Figure 3: RDS(on) vs. IDS at TJ = 25 ⁰C Figure 4: RDS(on) vs. IDS at TJ = 150 ⁰C |
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