GS66508B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

© 2009-2020 GaN Systems Inc.

11

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Source Sensing

The package features a dedicated source sense pin. The GaNPX® packaging utilizes no wire bonds so the source

connection is very low inductance. The dedicated source sense pin will further enhance performance by

eliminating the common source inductance if a dedicated gate drive signal kelvin connection is created. This

can be achieved connecting the gate drive signal from the driver to the gate pad and returning from the source

sense pad to the driver ground reference.

Thermal

The substrate is internally connected to the source/thermal pad on the bottom-side of the package. The

transistor is designed to be cooled using the printed circuit board. The Drain pad is not as thermally conductive

as the thermal pad. However, adding more copper under this pad will improve thermal performance by

reducing the package temperature.

Thermal Modeling

RC thermal models are available to support detailed thermal simulation using SPICE. The thermal models are

created using the Cauer model, an RC network model that reflects the real physical property and packaging

structure of our devices. This approach allows our customers to extend the thermal model to their system by

adding extra Rθ and Cθ to simulate the Thermal Interface Material (TIM) or Heatsink.

RC thermal model:

RC breakdown of RΘJC

R

θ (°C/W)

C

θ (W∙s/°C)

R

θ1 = 0.015

C

θ1 = 8.0E-05

R

θ2 = 0.23

C

θ2 = 7.4E-04

R

θ3 = 0.24

C

θ3 = 6.5E-03

R

θ4 = 0.015

C

θ4 = 2.0E-03

For more detail, please refer to Application Note GN007 “Modeling Thermal Behavior of GaN Systems’ GaNPX®

Using RC Thermal SPICE Models” available at www.gansystems.com

Reverse Conduction

GaN Systems enhancement mode HEMTs do not have an intrinsic body diode and there is zero reverse recovery

charge. The devices are naturally capable of reverse conduction and exhibit different characteristics depending

on the gate voltage. Anti-parallel diodes are not required for GaN Systems transistors as is the case for IGBTs to

achieve reverse conduction performance.