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GS66508B 数据表(PDF) 7 Page - GaN Systems Inc. |
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GS66508B 数据表(HTML) 7 Page - GaN Systems Inc. |
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7 / 16 page ![]() GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Rev 200402 © 2009-2020 GaN Systems Inc. 7 Submit datasheet feedback Electrical Performance Graphs Reverse Conduction Characteristics Reverse Conduction Characteristics Figure 9: Typical ISD vs. VSD@ TJ = 25 ⁰C Figure 10: Typical ISD vs. VSD @ TJ = 150 ⁰C IDS vs. VGS Characteristic RDS(on) Temperature Dependence Figure 11: Typical IDS vs. VGS Figure 12: Normalized RDS(on) as a function of TJ |
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