Features
• Half-bridge topology featuring the STDRIVEG611 GaN gate driver with
integrated LDOs, separated sink/source, overcurrent protection, integrated
bootstrap diode, standby
• Equipped with 75 mΩ typ., 650 V e-mode HEMT GaN
• Tunable hard-on and hard-off dV/dt, set at 10 V/ns typ. for motor control
applications
• 10.6 to 18 V (12 V typ.) VCC supply voltage
• Onboard adjustable deadtime generator to convert a single PWM signal in
independent high-side and low-side inputs with deadtime
• Separated inputs with external deadtime can also be used
• Programmable overcurrent protection with SmartShutDown, set at 9.5 A
• Footprint for, optional, additional high-voltage bulk capacitor and bootstrap
diode
• Onboard 3.3 V regulator for external circuitry supply
• RoHS compliant.