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EVLSTDRIVEG611 数据表(PDF) 1 Page - STMicroelectronics

部件名 EVLSTDRIVEG611
功能描述  Evaluation board for STDRIVEG611 600 V high-speed half-bridge gate driver with SGT120R65AL e-mode GaN HEMT
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

EVLSTDRIVEG611 数据表(HTML) 1 Page - STMicroelectronics

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Features
Half-bridge topology featuring the STDRIVEG611 GaN gate driver with
integrated LDOs, separated sink/source, overcurrent protection, integrated
bootstrap diode, standby
Equipped with 75 mΩ typ., 650 V e-mode HEMT GaN
Tunable hard-on and hard-off dV/dt, set at 10 V/ns typ. for motor control
applications
10.6 to 18 V (12 V typ.) VCC supply voltage
Onboard adjustable deadtime generator to convert a single PWM signal in
independent high-side and low-side inputs with deadtime
Separated inputs with external deadtime can also be used
Programmable overcurrent protection with SmartShutDown, set at 9.5 A
Footprint for, optional, additional high-voltage bulk capacitor and bootstrap
diode
Onboard 3.3 V regulator for external circuitry supply
RoHS compliant.
Description
The STDRIVEG611 is a high-speed, half-bridge gate driver optimized to drive high-
voltage, enhanced mode, GaN HEMTs.
It features separated high current sink/source gate driving pins, integrated LDOs,
undervoltage, bootstrap diode, overcurrent protection with SmartShutDown,
overtemperature, fault and shutdown pins, and standby to fully support hard
switching topologies in a 4x5mm QFN package.
The EVLSTDRIVEG611 board is easy to use and quick and adapt for evaluating the
characteristics of the STDRIVEG611 driving the SGT120R65AL 75 mΩ typ., 650 V E-
Mode GaN switches in the 5x6 mm QFN package.
It provides an onboard programmable deadtime generator and a 3.3 V linear voltage
regulator to supply external logic like microcontrollers.
Spare footprints are also included to allow customizing the board for the final
application, such as separate LIN and HIN input signals or single PWM signal.
The EVLSTDRIVEG611 is 56 x 70 mm wide, 2 layers, 2 Oz, FR-4 PCB, resulting in
23 °C/W Rth(J‑A) (equivalent to 46 °C/W for each GaN) in still air to evaluate high
power applications.
Product status link
EVLSTDRIVEG611
Evaluation board for STDRIVEG611 600 V high-speed half-bridge gate driver
with SGT120R65AL e-mode GaN HEMT
EVLSTDRIVEG611
Data brief
DB5115 - Rev 1 - September 2024
For further information contact your local STMicroelectronics sales office.
www.st.com


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