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ATSAMB11XR 数据表(PDF) 45 Page - Microchip Technology

部件名 ATSAMB11XR
功能描述  Ultra Low Power BLE 4.1 SiP/Module
PDF  87 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

ATSAMB11XR 数据表(HTML) 45 Page - Microchip Technology

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10.
Electrical Characteristics
There are voltage ranges where different VDDIO levels apply. This separation is for the IO drivers whose
drive strength is directly proportional to the IO supply voltage. In the ATSAMB11 products, there is a large
gap in the IO supply voltage range (2.3V to 3.6V). A guarantee on drive strength across this voltage
range would be intolerable to most vendors who only use a subsection of the IO supply range. As such,
these voltages are segmented into two manageable sections referenced as VDDIOM, and VDDIOH in
tables listed in this document..
10.1
Absolute Maximum Ratings
The values listed in this section are ratings that can be peaked by the device, but not sustained without
causing irreparable damage to the device.
Table 10-1. Absolute Maximum Ratings
Symbol
Characteristics
Min.
Max.
Unit
VDDIO
I/O Supply Voltage
-0.3
4.2
V
VBAT
Battery Supply Voltage
-0.3
5.0
VIN (1)
Digital Input Voltage
-0.3
VDDIO
VAIN(2)
Analog Input Voltage
-0.3
1.5
TA
Storage Temperature
-65
150
°C
Note: 
1.
VIN corresponds to all the digital pins.
2.
VAIN corresponds to all the analog pins, RFIO, XO_N, XO_P, TPP, RTC_CLK_N and RTC_CLK_P.
10.2
Recommended Operating Conditions
Table 10-2. Recommended Operating Conditions
Symbol
Characteristic
Min.
Typ.
Max.
Unit
VDDIOM
I/O Supply Voltage Mid-Range
2.3
2.50
3.00
V
VDDIOH
I/O Supply Voltage High Range
3.00
3.30
3.60
VBAT
Battery Supply Voltage (1)
2.3
3.6
4.3
Operating Temperature
-40
85
°C
Note: 
1.
VBAT must not be less than VDDIO.
10.3
DC Characteristics
The Table 10-3 provides the DC characteristics for the digital pads.
ATSAMB11XR/ZR
© 2017 Microchip Technology Inc.
Datasheet Preliminary
DS70005342A-page 45



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