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CY2VC511 数据表(PDF) 4 Page - Cypress Semiconductor |
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CY2VC511 数据表(HTML) 4 Page - Cypress Semiconductor |
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4 / 7 page ![]() PRELIMINARY CY2VC511 Document Number: 001-10796 Rev. *D Page 4 of 7 Parameter Measurements Figure 2. Output Duty Cycle Timing Figure 3. Output Rise and Fall Time DC Electrical Characteristics Parameter Description Condition Min Typ Max Unit IDD Operating Supply Current VDD = 3.465V, output unloaded – – 110 mA VOH High Output Voltage VDD = min, IOH = –4 mA 0.9*VDD –– V VOL Low Output Voltage VDD = max, IOL = 4 mA – – 0.1*VDD V VIH Input High Voltage For REFIN 1.25 – 1.8 V VIL Input Low Voltage For REFIN – – 0.25 V VVIN VIN Input Voltage 0 – VDD V IVIN VIN Input Current VSS ≤ VIN ≤ VDD –10 – 60 μA INLVIN [3, 4] VIN to FOUT Integral Nonlin- earity VSS ≤ VIN ≤ VDD –1 – % AC Electrical Characteristics [3] Parameter Description Test Conditions Min Typ Max Unit FOUT Output Frequency – 27 – MHz PR Pull Range VIN = VDD to VSS, relative to nominal fOUT (VIN = 1.65V) across operating temperature and supply voltage. ±115 – – ppm TDC Duty Cycle Measured at VDD/2, defined in Figure 2 45 50 55 % TR Output Rise Time 20% to 80% of VDD, CLOAD = 15 pF – 0.7 1.5 ns TF Output Fall Time 80% to 20% of VDD, CLOAD = 15 pF – 0.8 1.5 ns TLOCK Start Up Time Time for CLK to reach valid frequency measured from the time VDD = VDD (min) –– 5 ms Note 3. Not 100% tested, guaranteed by design and characterization. 4. Integral nonlinearity is defined in IEEE Standard 1241-2000. CLK T PW T PERIOD T DC = T PW T PERIOD CLK 20% 80% TR TF 20% 80% VDD 0V [+] Feedback |
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