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M69AW048B 数据表(PDF) 4 Page - STMicroelectronics |
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M69AW048B 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 29 page ![]() M69AW048B 4/29 SUMMARY DESCRIPTION The M69AW048B is a 32 Mbit (33,554,432 bit) CMOS memory, organized as 2,097,152 words by 16 bits, and is supplied by a single 2.7V to 3.3V supply voltage range. M69AW048B is a member of STMicroelectronics PSRAM memory family. These devices are manu- factured using dynamic random access memory cells, to minimize the cell size, and maximize the amount of memory that can be implemented in a given area. However, through the use of internal control logic, the device is fully static in its operation, requiring no external clocks or timing strobes, and has a standard Asynchronous SRAM Interface. The internal control logic of the M69AW048B han- dles the periodic refresh cycle, automatically, and without user involvement. Write cycles can be performed on a single byte by using Upper Byte Enable (UB) and Lower Byte En- able (LB). The device can be put into standby mode using Chip Enable (E1) or in Power-Down mode by us- ing Chip Enable (E2). The device features various kinds of Power-Down modes for power saving as a user configurable op- tion: ■ The Partial Array Refresh (PAR) performs a limited refresh of the part of the PSRAM array (4 Mbits, 8 Mbits, 16Mbits) that contains essential data. ■ Deep Power-Down mode: this mode achieves a very low current consumption by halting all the internal activities. Since the refresh circuitry is halted, the duration of the power- down should be less than the maximum period for refresh. Figure 2. Logic Diagram Table 1. Signal Names AI05844c 21 A0-A20 W DQ0-DQ15 VCC M69AW048B G 16 E1 UB LB VSS E2 A0-A20 Address Input DQ0-DQ15 Data Input/Output E1, E2 Chip Enable, Power Down G Output Enable W Write Enable UB Upper Byte Enable LB Lower Byte Enable VCC Supply Voltage VSS Ground NC Not Connected (no internal connection) |
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