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S29AS008J 数据表(PDF) 9 Page - Cypress Semiconductor

部件名 S29AS008J
功能描述  8 Mbit (1M x 8-Bit / 512K x 16-Bit), 1.8 V Boot Sector Flash
PDF  56 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

S29AS008J 数据表(HTML) 9 Page - Cypress Semiconductor

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Document Number: 002-00870 Rev.*K
Page 9 of 56
S29AS008J
7.
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command
register. The command register itself does not occupy any addressable memory location. The register is composed of latches that
store the commands, along with the address and data information needed to execute the command. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table lists the device bus
operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Legend
L = Logic Low = VIL, H = Logic High = VIH, VID = 9.0–11.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes
1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL).
2. The sector group protect and sector group unprotect functions may also be implemented via programming equipment. See Sector Group Protection/Unprotection
on page 15.
3. If WP# = VIL, the two outermost boot sectors remain protected. If WP# = VIH, the two outermost boot sector group protection depends on whether they were last
protected or unprotected. If WP# = VHH, all sectors are unprotected.
7.1
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is
set at logic 1, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by
CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
7.2
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the
device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or bytes.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no
spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the command register contents are altered.
S29AS008J Device Bus Operations
Operation
CE#
OE# WE#
RESET#
WP#
Addresses
(Note 1)
DQ0–
DQ7
DQ8–DQ15
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
X
AIN
DOUT
DOUT
DQ8–DQ14 = High-
Z, DQ15 = A-1
Write (Program/
Erase)
LH
L
H
(Note 3
)
AIN
DIN
DIN
Standby
VCC
0.2 V
XX
VCC
0.2 V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
LH
L
VID
X
Sector Address,
A6 = L, A3 = A2 = L,
A1 = H, A0 = L
DIN
XX
Sector Group
Unprotect (Note 2)
LH
L
VID
H
Sector Address,
A6 = H, A3 = A2 = L,
A1 = H, A0 = L
DIN
XX
Temporary Sector
Group Unprotect
XX
X
VID
HAIN
DIN
DIN
High-Z



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