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ISL62391IRTZ 数据表(PDF) 20 Page - Renesas Technology Corp |
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ISL62391IRTZ 数据表(HTML) 20 Page - Renesas Technology Corp |
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20 / 22 page ![]() ISL62391, ISL62392, ISL62391C, ISL62392C FN6666 Rev 8.00 Page 20 of 22 August 25, 2015 FB (Pins 7 and 28), and VOUT (Pins 8 and 27) The VOUT pin is used to generate the R3 synthetic ramp voltage and for soft-discharge of the output voltage during shutdown events. This signal should be routed as close to the regulation point as possible. The input impedance of the FB pin is high, so place the voltage programming and loop compensation components close to the VOUT, FB, and GND pins, keeping the high impedance trace short. FSET (Pins 2 and 6) This pin requires a quiet environment. The resistor RFSET and capacitor CFSET should be placed directly adjacent to this pin. Keep fast moving nodes away from this pin. LGATE (Pins 15 and 20) The signal going through this trace is both high dv/dt and high di/dt, with high peak charging and discharging current. Route this trace in parallel with the trace from the PGND pin. These two traces should be short, wide, and away from other traces. There should be no other weak signal traces in proximity with these traces on any layer. BOOT (Pins 14 and 21), UGATE (Pins 13 and 22), and PHASE (Pins 12 and 23) The signals going through these traces are both high dv/dt and high di/dt, with high peak charging and discharging current. Route the UGATE and PHASE pins in parallel with short and wide traces. There should be no other weak signal traces in proximity with these traces on any layer. Copper Size for the Phase Node The parasitic capacitance and parasitic inductance of the phase node should be kept very low to minimize ringing. It is best to limit the size of the PHASE node copper in strict accordance with the current and thermal management of the application. An MLCC should be connected directly across the drain of the upper MOSFET and the source of the lower MOSFET to suppress the turn-off voltage spike. |
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