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M69AW024B 数据表(PDF) 23 Page - STMicroelectronics

部件名 M69AW024B
功能描述  16 Mbit (1M x16) 3V Asynchronous PSRAM
PDF  29 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M69AW024B 数据表(HTML) 23 Page - STMicroelectronics

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M69AW024B
Table 9. Power Down and Power-Up AC Parameters
Note: 1. Some data may be written to any address location if tEHWH is less than the minimum required time.
2. The device has to enter and exit Power Down mode after tCHCL.
3. The Input Transition Time used in AC measurements is 5ns.
Figure 18. Standby Mode Entry AC Waveforms, After Read or Write
Note: Both tEHGH and tEHWH define the earliest entry timing for Stand-by mode. If either of timing is not satisfied, it takes the tAVAX(min) period
from either the last address transition of A0, A1 and A2, or E1 rising edge.
Symbol
Alt.
Parameter
M69AW024B
Unit
–60
–70
Min
Max
Min
Max
tCLEL
tCSP
E2 Low Setup Time for Power Down Entry
10
10
ns
tELCH
tC2LP
E2 Low Hold Time after Power Down Entry
80
90
ns
tCHEL
tCHH
E1 High Hold Time following E2 High after Power-
Down Exit (Sleep Mode only)
350
350
µs
tEHEL
tCHHP
E1 High Hold Time following E2 High after Power-
Down Exit (not in Sleep Mode)
400
400
µs
tEHCH1
tCHS
E1 High Setup Time following E2 High after Power-
Down Exit
10
10
ns
tEHCH2
tC2LH
Power-up Time 1
50
50
µs
tCHCL1
2
tCHCL2
2
tC2HL
Power-up Time 2
50
50
µs
tEHGH
tCHOX
E1 High to G Invalid Time for Standby Entry
10
10
ns
tEHWH
tCHWX
E1 High to W Invalid Time for Standby Entry
10
10
ns
tT
tT
Input Transition Time
1
25
1
25
ns
AI07741
E1
G
W
tEHGH
tEHWH
Active (Write)
Standby
Active (Read)
Standby
E1
G
W



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