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AFT09MP055N 数据表(PDF) 4 Page - NXP Semiconductors |
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AFT09MP055N 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 21 page ![]() 4 RF Device Data Freescale Semiconductor, Inc. AFT09MP055NR1 AFT09MP055GNR1 TYPICAL CHARACTERISTICS 6 250 109 90 108 107 105 110 130 150 170 190 210 230 106 20 1 1000 0 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 100 15 Figure 3. Drain Current versus Drain--Source Voltage TJ, JUNCTION TEMPERATURE (°C) Figure 4. MTTF versus Junction Temperature -- CW Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. VDD = 12.5 Vdc 0 2 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 5 VGS =3.75 Vdc 4 46 8 20 3.5 Vdc TA =25°C 0 9 10 10 510 Coss Crss Measured with ±30 mV (rms ) ac @1 MHz, VGS =0 Vdc 10 14 12 16 18 3.25 Vdc 3Vdc 2.5 Vdc 7.71 Amps ID =5.13 Amps 6.41 Amps 105 104 Ciss 8 7 3 2 1 Note: Each side of device measured separately. Ciss value includes input matching network. Note: Measured with both sides of the transistor tied together. |
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