AFT09MP055NR1 AFT09MP055GNR1

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

Designed for mobile two--way radio applications with frequencies from

764 to 941 MHz. The high gain, ruggedness and broadband performance of

these devices make them ideal for large--signal, common source amplifier

applications in mobile radio equipment.

Narrowband Performance

Frequency

(MHz)

(dB)

(%)

(W)

870

17.5

69.0

57

800 MHz Broadband Performance

Frequency

(MHz)

(dB)

(%)

(W)

764

16.1

56.0

61

816

15.8

58.0

57

870

15.7

61.0

56

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test

Voltage

Result

CW

>65:1 at all

Phase Angles

3

(3 dB Overdrive)

17

No Device

Degradation

1. Measured in 764--870 MHz broadband test circuit.

Features

• Characterized for Operation from 764 to 941 MHz

• Integrated Input Matching Improves Broadband Performance

• Integrated ESD Protection

• Broadband — Full Power Across the Band (764--870 MHz)

• 225°C Capable Plastic Package

• Exceptional Thermal Performance

• Extreme Ruggedness

• High Linearity for: TETRA, SSB

• Cost--effective Over--molded Plastic Packaging

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

Typical Applications

• Output Stage 800 MHz Band Mobile Radio

• Output Stage 700 MHz Band Mobile Radio

This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.

Document Number: AFT09MP055N

Rev. 0, 7/2013

Freescale Semiconductor

Technical Data

764--941 MHz, 55 W, 12.5 V

BROADBAND

RF POWER LDMOS TRANSISTORS

AFT09MP055NR1

AFT09MP055GNR1

TO--270WB--4

AFT09MP055NR1

TO--270WB--4 GULL

AFT09MP055GNR1

Figure 1. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistor.

(Top View)

Drain A

Drain B

Gate A

Gate B

© Freescale Semiconductor, Inc., 2013. All rights reserved.