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AFT09MP055N 数据表(PDF) 12 Page - NXP Semiconductors

部件名 AFT09MP055N
功能描述  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
PDF  21 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

AFT09MP055N 数据表(HTML) 12 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND
REFERENCE CIRCUIT
50
20
30
40
50
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. Output Power versus Gate--Source Voltage
80
1
2
34
f = 816 MHz
0
0
Detail A
0.5
1.5
2
2.5
40
30
f = 816 MHz
VGS, GATE--SOURCE VOLTAGE (VOLTS)
60
70
VDD = 12.5 Vdc, Pin =1.5 W
20
10
VDD = 13.6 Vdc, Pin =1.5 W
Detail A
10
VDD = 13.6 Vdc, Pin =1 W
1
VDD = 12.5 Vdc
Pin =1 W
VDD = 13.6 Vdc, Pin =1.5 W
VDD = 13.6 Vdc, Pin =1 W
VDD = 12.5 Vdc, Pin =1.5 W
VDD = 12.5 Vdc
Pin =1 W
100
120
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
13
15
14
3
Gps
40
0
20
18
17
16
19
80
1
Pout
VDD = 12.5 Vdc, IDQ(A+B) = 800 mA
764 MHz
ηD
870 MHz
60
0.1
816 MHz
870 MHz
816 MHz
764 MHz
816 MHz
764 MHz
870 MHz



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