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AFT09MP055N 数据表(PDF) 7 Page - NXP Semiconductors |
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AFT09MP055N 数据表(HTML) 7 Page - NXP Semiconductors |
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7 / 21 page ![]() AFT09MP055NR1 AFT09MP055GNR1 7 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 870 MHz 60 70 80 0 01 2 3 4 40 20 60 80 90 0.5 1.5 2.5 3.5 4.5 100 VDD = 13.6 Vdc, Pin =1 W f = 870 MHz VDD = 12.5 Vdc Pin =0.5 W VDD = 12.5 Vdc, Pin =1 W VDD = 13.6 Vdc, Pin =0.5 W VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. Output Power versus Gate--Source Voltage at a Constant Input Power Figure 8. Power Gain, Drain Efficiency and Output Power versus Input Power Pin, INPUT POWER (WATTS) 12 16 0.1 30 50 40 0 20 19 20 1 ηD Pout VDD = 12.5 Vdc, IDQ(A+B) = 550 mA f = 870 MHz 15 14 13 10 80 70 50 30 10 18 17 3 Gps VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pout =57 W Avg. f MHz Zsource Ω Zload Ω 870 1.40 -- j1.00 0.61 -- j0.14 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz Input Matching Network Device Under Test Output Matching Network Zsource Zload 50 Ω 50 Ω |
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