2

RF Device Data

Freescale Semiconductor, Inc.

MHT2000NR1 MHT2000GNR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

–0.5, +65

Vdc

Gate--Source Voltage

–0.5, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

–65 to +150

C

Case Operating Temperature

150

C

225

C

Input Power

20

dBm

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

6.1

1.2

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1B

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

II

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

1

Adc

Stage 1 -- On Characteristics

Gate Threshold Voltage

1.2

1.9

2.7

Vdc

Gate Quiescent Voltage

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

10.3

11.2

12.6

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Measured in Freescale Narrowband Test Fixture.

5. See Appendix A for functional test measurements and test fixture.

(continued)