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MHT2000N 数据表(PDF) 3 Page - NXP Semiconductors |
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MHT2000N 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 21 page ![]() MHT2000NR1 MHT2000GNR1 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TC =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 -- Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS =65 Vdc, VGS =0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS =28 Vdc, VGS =0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS =1.5 Vdc, VDS =0 Vdc) IGSS — — 1 Adc Stage 2 -- On Characteristics Gate Threshold Voltage (VDS =10 Vdc, ID =80 Adc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS =28 Vdc, IDQ2 = 195 mAdc) (1) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD =28 Vdc, IDQ2 = 195 mAdc) (1,2) VGG(Q) 9.5 10.5 11.5 Vdc Drain--Source On--Voltage (VGS =10 Vdc, ID = 800 mAdc) VDS(on) 0.15 0.47 0.8 Vdc Stage 2 -- Dynamic Characteristics (3) Output Capacitance (VDS =28 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Coss — 111 — pF Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(1) 50 ohm system) VDD =28 Vdc, IDQ1 =55 mA, IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz Power Gain Gps 25.5 27.7 30.5 dB Power Added Efficiency PAE 41.5 43.8 — % Input Return Loss IRL — –18 –10 dB Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB Adjacent Channel Power Ratio ACPR — –50 –46 dBc Input Return Loss IRL — –15 –10 dB 1. Measured in Freescale Narrowband Test Fixture. 2. See Appendix A for functional test fixture documentation. 3. Part internally matched both on input and output. 4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. |
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