MHT2000NR1 MHT2000GNR1

1

RF Device Data

Freescale Semiconductor, Inc.

RF LDMOS Integrated Power Amplifiers

Wideband integrated circuit is suitable for industrial heating applications

operating at 2450 MHz. This multi--stage structure is rated for 26 to 32 V

operation in both CW and pulse applications.

Power Gain — 27.7 dB

Power Added Efficiency — 43.8%

 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 W CW Output

Power

Features

 Multi--stage structure is rated for 26 to 32 V Operation

 Integrated Quiescent Current Temperature Compensation with

 Integrated ESD Protection

 Excellent Thermal Stability

 225C Capable Plastic Package

 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

Figure 1. Functional Block Diagram

Quiescent Current

(Top View)

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistors.

GND

NC

GND

GND

1

2

3

4

5

6

7

8

16

15

14

13

12

9

10

GND

11

NC

NC

NC

NC

NC

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.

MHT2000NR1

MHT2000GNR1

2450 MHz, 25 W CW, 28 V

INDUSTRIAL HEATING, RUGGED

RF LDMOS INTEGRATED

POWER AMPLIFIERS

TO--270WB--16

PLASTIC

MHT2000NR1

TO--270WBG--16

PLASTIC

MHT2000GNR1

Document Number: MHT2000N

Rev. 0, 5/2014

Freescale Semiconductor

Technical Data

 Freescale Semiconductor, Inc., 2014. All rights reserved.