MHT2000N datasheet(7/21 Pages) NXP

7 / 21 page

MHT2000NR1 MHT2000GNR1

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — NARROWBAND

100

Pout, OUTPUT POWER (WATTS) CW

Figure 9. Power Gain and Power Added Efficiency

versus CW Output Power as a Function of IDQ1

VDD =28 Vdc

IDQ2 = 195 mA

f = 2450 MHz

IDQ1 varied from

45 mA to 65 mA

in5mA steps

IDQ1 =65 mA

60 mA

100

Pout, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain and Power Added Efficiency

versus CW Output Power as a Function of IDQ2

VDD =28 Vdc

IDQ1 =55 mA

f = 2450 MHz

IDQ2 = 235 mA

215 mA

195 mA

175 mA

155 mA

IDQ2 varied from

155 mA to 235 mA

in 20 mA steps

55 mA

50 mA

45 mA

Figure 11. MTTF versus Junction Temperature

This above graph displays calculated MTTF in hours when the device

is operated at VDD =28 Vdc,Pout = 25 W CW, and PAE = 43.8%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

250

109

TJ, JUNCTION TEMPERATURE (C)

108

104

110

130

150

170

190

210

230

2nd Stage

1st Stage

107

106

105

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