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MHT2000N 数据表(PDF) 6 Page - NXP Semiconductors

部件名 MHT2000N
功能描述  RF LDMOS Integrated Power Amplifiers
PDF  21 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

MHT2000N 数据表(HTML) 6 Page - NXP Semiconductors

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6
RF Device Data
Freescale Semiconductor, Inc.
MHT2000NR1 MHT2000GNR1
TYPICAL CHARACTERISTICS — NARROWBAND
100
25
30
0
50
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power
VDD =28 Vdc
IDQ1 =55 mA
IDQ2 = 195 mA
f = 2450 MHz
10
1
29
28
27
26
40
30
20
10
Figure 6. CW Output Power versus Input Power
Pin, INPUT POWER (dBm)
20
49
14
48
47
46
41
15
17
16
18
45
19
13
P3dB = 44.9 dBm (30.9 W)
P1dB = 44.5 dBm (28.05 W)
44
43
VDD =28 Vdc,IDQ1 =55 mA
IDQ2 = 195 mA, f = 2450 MHz
42
Ideal
Actual
100
25
30
0
50
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD1
VD2 =28 Vdc
IDQ1 =55 mA
IDQ2 = 195 mA
f = 2450 MHz
10
0.1
29
28
27
26
40
30
20
10
1
VD1 =32 V
30 V
100
25
30
0
50
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD2
VD1 =28 Vdc
IDQ1 =55 mA
IDQ2 = 195 mA
f = 2450 MHz
10
0.1
29
28
27
26
40
30
20
10
1
VD2 =28 V
28 V
30 V
32 V
28 V
30 V
32 V



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