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IX6611TR 数据表(PDF) 6 Page - IXYS Corporation

部件名 IX6611TR
功能描述  IGBT Gate Driver
PDF  15 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IX6611TR 数据表(HTML) 6 Page - IXYS Corporation

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6
PRELIMINARY
R00A
IX6611
1.5.5
Input Interface/Pulse Recovery
1.5.6
Thermal Shutdown Circuit
VCC=PVCC=15V, VEE=PVEE=-5V. Not production tested. Specifications are characterized and guaranteed by design.
1.5.7
UVLO Circuit
FLT1 output is connected to a 50k
 pullup resistor.
1.5.8
OVLO Circuit
FLT1 and FLT2 outputs are connected to 50k
 pullup resistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Receive input resistance
RRCVP_IN,
RRCVN_IN
Measured at terminals RCVP, RCVN with
respect to VEE
0.5
1
1.5
k
Receive input high voltage
VRCVP_IH
VRCVN_IH
Measured with respect to VEE at RCVP and
RCVN terminals by monitoring the state
change at the IGBT driver output terminals
(OUTP and OUTN). @ VDD=0V
2.2
-
-
V
Receive input low voltage
VRCVP_IL
VRCVN_IL
--
1
V
Receive input hysteresis
VHST
0.5
1
-
V
Minimum input pulse width detect
TDET_RCVP
TDET_RCVN
Measured at RCVP and RCVN terminals by
monitoring the state change at the IGBT driver
output terminals @ VDD=0V
100
200
-
ns
Parameter
Symbol
Conditions
Min Typ Max Units
Thermal shutdown rising threshold
tSHDN_RISE
-
130
145
160
°C
Thermal shutdown hysteresis
tSHDN_HYS
-20-
°C
Parameter
Symbol
Conditions
Min Typ Max Units
(VCC-VCOM) UVLO rising threshold
UVLO_VTH-RISE
VCOM=0V, VEE=PVEE=0 to -10V
UVLO rising threshold is measured by
monitoring state change at FLT1 terminal
8
9.5
11
V
(VCC-VCOM) UVLO hysteresis
UVLO_VHYST
-1.5
-
V
Parameter
Symbol
Conditions
Min Typ Max Units
(VCC-VCOM) OVLO rising threshold
OVLO_VTH-RISE
VCOM=0V, VEE=PVEE=0 to -10V
OVLO rising threshold is measured by
monitoring state change at FLT1 and FLT2
terminals
26
28
30
V
(VCC-VCOM) OVLO hysteresis
OVLO_VHYST
-2
-
V



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