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M36LLR8760DF 数据表(PDF) 13 Page - STMicroelectronics

部件名 M36LLR8760DF
功能描述  256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M36LLR8760DF 数据表(HTML) 13 Page - STMicroelectronics

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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
Table 6. Flash 1 DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDDF1 Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQF
±1
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQF
±1
µA
IDD1
Supply Current
Asynchronous Read (f=5MHz)
EF1 = VIL, GF1 = VIH
13
15
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
IDD2
Supply Current
(Reset)
RPF = VSS ± 0.2V
50
110
µA
IDD3
Supply Current (Standby)
EF1 = VDDF1 ± 0.2V
50
110
µA
IDD4
Supply Current (Automatic Standby)
EF1 = VIL, GF1 = VIH
50
110
µA
IDD5
(1)
Supply Current (Program)
VPPF = VPPH
820
mA
VPPF = VDDF1
10
25
mA
Supply Current (Erase)
VPPF = VPPH
820
mA
VPPF = VDDF1
10
25
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=54MHz) in another Bank
35
52
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
EF1 = VDDF1 ± 0.2V
50
110
µA
IPP1
(1)
VPPF Supply Current (Program)
VPPF = VPPH
25
mA
VPPF = VDDF1
0.2
5
µA
VPPF Supply Current (Erase)
VPPF = VPPH
25
mA
VPPF = VDDF1
0.2
5
µA
IPP2
VPPF Supply Current (Read)
VPPF ≤ VDDF1
0.2
5
µA
IPP3
(1)
VPPF Supply Current (Standby)
VPPF ≤ VDDF1
0.2
5
µA



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