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M36LLR8760DF 数据表(PDF) 4 Page - STMicroelectronics |
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M36LLR8760DF 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 19 page ![]() M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1 4/19 SUMMARY DESCRIPTION The M36LLR8760T1, M36LLR8760D1, M36LLR8760M1 and M36LLR8760B1 combine three memory devices in a Multi-Chip Package: ■ a 256-Mbit, Multiple Bank Flash memory, the M30L0R8000(T/B)0 (Flash 1) ■ a 128-Mbit, Multiple Bank Flash memory, the M58LR128GT/B (Flash 2) ■ a 64-Mbit PseudoSRAM, the M69KB096AA. For detailed information on how to use the memo- ry components, refer to the M30L0R8000(T/B)0, M58LR128GT/B and M69KB096AA datasheets which are available from your local STMicroelec- tronics distributor and should be read in conjunc- tion with the M36LLR8760x1 datasheet. What differs between the M36LLR8760T1, M36LLR8760D1 and M36LLR8760B1 is the con- figuration of the two Flash memories: ■ in the M36LLR8760T1, Flash 1 and Flash 2 both have a Top Configuration (Parameter Blocks located at the top of the address space). ■ in the M36LLR8760D1, Flash 1 has a Bottom Configuration (Parameter Blocks at the bottom of the address space) and Flash 2 has a Top Configuration. ■ In the M36LLR8760M1, Flash 1 has a Top Configuration and Flash 2 has a Bottom Configuration. ■ In the M36LLR8760B1, both Flash 1 and Flash 2 have a Bottom Configuration. Recommended operating conditions do not allow more than one memory to be active at the same time. The memories are offered in a Stacked LFBGA88 (8 x 10mm, 8x10 ball array, 0.8mm pitch) pack- age. In addition to the standard version, the package is also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. All packages are compliant with Lead-free soldering processes. The memory is supplied with all the bits erased (set to ‘1’). |
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