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PIC18LF4520E/SPQTP 数据表(PDF) 87 Page - Microchip Technology |
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PIC18LF4520E/SPQTP 数据表(HTML) 87 Page - Microchip Technology |
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87 / 390 page  2004 Microchip Technology Inc. Preliminary DS39631A-page 85 PIC18F2420/2520/4420/4520 7.3 Reading the Data EEPROM Memory To read a data memory location, the user must write the address to the EEADR register, clear the EEPGD con- trol bit (EECON1<7>) and then set control bit, RD (EECON1<0>). The data is available on the very next instruction cycle; therefore, the EEDATA register can be read by the next instruction. EEDATA will hold this value until another read operation, or until it is written to by the user (during a write operation). The basic process is shown in Example 7-1. 7.4 Writing to the Data EEPROM Memory To write an EEPROM data location, the address must first be written to the EEADR register and the data writ- ten to the EEDATA register. The sequence in Example 7-2 must be followed to initiate the write cycle. The write will not begin if this sequence is not exactly followed (write 55h to EECON2, write 0AAh to EECON2, then set WR bit) for each byte. It is strongly recommended that interrupts be disabled during this code segment. Additionally, the WREN bit in EECON1 must be set to enable writes. This mechanism prevents accidental writes to data EEPROM due to unexpected code exe- cution (i.e., runaway programs). The WREN bit should be kept clear at all times, except when updating the EEPROM. The WREN bit is not cleared by hardware. After a write sequence has been initiated, EECON1, EEADR and EEDATA cannot be modified. The WR bit will be inhibited from being set unless the WREN bit is set. Both WR and WREN cannot be set with the same instruction. At the completion of the write cycle, the WR bit is cleared in hardware and the EEPROM Interrupt Flag bit, EEIF, is set. The user may either enable this interrupt or poll this bit. EEIF must be cleared by software. 7.5 Write Verify Depending on the application, good programming practice may dictate that the value written to the memory should be verified against the original value. This should be used in applications where excessive writes can stress bits near the specification limit. EXAMPLE 7-1: DATA EEPROM READ EXAMPLE 7-2: DATA EEPROM WRITE MOVLW DATA_EE_ADDR ; MOVWF EEADR ; Data Memory Address to read BCF EECON1, EEPGD ; Point to DATA memory BCF EECON1, CFGS ; Access EEPROM BSF EECON1, RD ; EEPROM Read MOVF EEDATA, W ; W = EEDATA MOVLW DATA_EE_ADDR ; MOVWF EEADR ; Data Memory Address to write MOVLW DATA_EE_DATA ; MOVWF EEDATA ; Data Memory Value to write BCF EECON1, EEPGD ; Point to DATA memory BCF EECON1, CFGS ; Access EEPROM BSF EECON1, WREN ; Enable writes BCF INTCON, GIE ; Disable Interrupts MOVLW 55h ; Required MOVWF EECON2 ; Write 55h Sequence MOVLW 0AAh ; MOVWF EECON2 ; Write 0AAh BSF EECON1, WR ; Set WR bit to begin write BSF INTCON, GIE ; Enable Interrupts ; User code execution BCF EECON1, WREN ; Disable writes on write complete (EEIF set) |
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