MP6404 datasheet(4/11 Pages) TOSHIBA

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MP6404

2004-07-01

Electrical Characteristics (Ta = 25°C) (Pch MOS FET)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

―

±10

µA

Drain cut-off current

IDSS

VDS = −60 V, VGS = 0 V

―

−100

µA

Drain source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−60

―

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

―

−2.0

VGS = −4 V, ID = −2.5 A

―

0.24

0.28

Drain-source ON resistance

RDS (ON)

VGS = −10 V, ID = −2.5 A

―

0.16

0.19

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID =−2.5 A

2.0

4.0

―

Input capacitance

Ciss

―

630

―

Reverse transfer capacitance

Crss

―

Output capacitance

Coss

VDB = −10 V, VGS = 0 V, f = 1 MHz

―

290

―

Rise time

―

Turn-on time

ton

―

Fall time

―

Switching time

Turn-off time

toff

VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 µs

―

200

―

Total gate charge

(gate-source plus gate-drain)

―

Gate-source charge

Qgs

―

Gate-drain (“miller”) charge

Qgd

VDD ≈ −48 V, VGS = −10 V, ID = −5 A

―

Source-Drain Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

IDR

―

−5

Pulse drain reverse current

IDRP

―

−20

Diode forward voltage

VDSF

IDR = −5 A, VGS = 0 V

―

1.7

Reverse recovery time

trr

―

Reverse recovery charge

Qrr

IDR = −5 A, VGS = 0 V

dIDR/dt = 50 A/µs

―

0.1

―

µC

Marking

−10 V

0 V

VGS

VDD ≈ −30 V

ID = −2.5 A

VOUT

MP6404

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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