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MP6404 数据表(PDF) 10 Page - Toshiba Semiconductor

部件名 MP6404
功能描述  TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
PDF  11 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

MP6404 数据表(HTML) 10 Page - Toshiba Semiconductor

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MP6404
2004-07-01
10
Drain-source voltage VDS (V)
Safe Operating Area
(Applicable to Nch MOS FET)
Drain-source voltage VDS (V)
Safe Operating Area
(Applicable to Pch MOS FET)
Channel temperature Tch (°C)
EAS – Tch
(Applicable to Nch MOS FET)
Channel temperature Tch (°C)
EAS – Tch
(Applicable to Pch MOS FET)
0
25
100
200
300
400
500
50
75
100
125
150
0
25
40
80
120
160
200
50
75
100
125
150
−0.1
−1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
−0.3
−1
−3
−10
−30
−3
−10
−30
−100
ID max
1 ms*
100 µs*
10 ms*
10 µs*
100 ms*
0.1
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.3
1
3
10
30
3
10
30
100
ID max
1 ms*
100 µs*
10 ms*
10 µs*
100 ms*
Test Cirdcuit
Test Waveform
IAR
BVDSS
VDD
VDS
Peak IAR = 5 A, RG = 25 Ω
VDD = 25 V, L = 7 mH
−15 V
15 V
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
DD
VDSS
VDSS
2
AS
V
B
B
·
·L·I
2
1
Ε
Test Circuit
Test Waveform
IAR
BVDSS
VDD
VDS
Peak IAR = −5 A, RG = 25 Ω
VDD = −25 V, L = 14.84 mH
−15 V
15 V
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
DD
VDSS
VDSS
2
AS
V
B
B
·
·L·I
2
1
Ε



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