数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

MP6404 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 MP6404
功能描述  TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

MP6404 数据表(HTML) 1 Page - Toshiba Semiconductor

  MP6404 Datasheet HTML 1Page - Toshiba Semiconductor MP6404 Datasheet HTML 2Page - Toshiba Semiconductor MP6404 Datasheet HTML 3Page - Toshiba Semiconductor MP6404 Datasheet HTML 4Page - Toshiba Semiconductor MP6404 Datasheet HTML 5Page - Toshiba Semiconductor MP6404 Datasheet HTML 6Page - Toshiba Semiconductor MP6404 Datasheet HTML 7Page - Toshiba Semiconductor MP6404 Datasheet HTML 8Page - Toshiba Semiconductor MP6404 Datasheet HTML 9Page - Toshiba Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 11 page
background image
MP6404
2004-07-01
1
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L2-π-MOSV inOne)
MP6404
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
• 4-V gate drivability
• Small package by full molding (SIP 12 pins)
• High drain power dissipation (6-device operation)
: PT = 36 W (Tc = 25°C)
• Low drain-source ON resistance: RDS (ON) =120 mΩ (typ.) (Nch)
160 mΩ (typ.) (Pch)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch)
4.0 S (typ.) (Pch)
• Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V)
IDSS = 100 µA (max) (VDS = 60 V)
• Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
Nch
Pch
Unit
Drain-source voltage
VDSS
60
−60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
−60
V
Gate-source voltage
VGSS
±20
±20
V
DC
ID
5
−5
Drain current
Pulse
IDP
20
−20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.2
W
Ta = 25°C
4.4
Drain power dissipation
(6-device operation)
Tc = 25°C
PDT
36
W
Single pulse avalanche energy
(Note 1)
EAS
129
273
mJ
Avalanche current
IAR
5
−5
A
1 device
operation
EAR
0.22
Repetitive avalanche
energy
(Note 2) 6 device
operation
EART
0.44
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Condition for avalanche energy (single pulse)
Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A
Pch: VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1K
Weight: 3.9 g (typ.)


类似零件编号 - MP6404

制造商部件名数据表功能描述
logo
Toshiba Semiconductor
MP6404 TOSHIBA-MP6404 Datasheet
213Kb / 11P
High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications
MP6404 TOSHIBA-MP6404_07 Datasheet
213Kb / 11P
High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications
More results

类似说明 - MP6404

制造商部件名数据表功能描述
logo
Toshiba Semiconductor
MP4403 TOSHIBA-MP4403 Datasheet
328Kb / 7P
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
MP4202 TOSHIBA-MP4202 Datasheet
322Kb / 6P
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
MP4210 TOSHIBA-MP4210 Datasheet
318Kb / 5P
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
MP4410 TOSHIBA-MP4410 Datasheet
155Kb / 3P
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
logo
List of Unclassifed Man...
MP4703 ETC-MP4703 Datasheet
331Kb / 7P
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
logo
Toshiba Semiconductor
SSM6J07FU TOSHIBA-SSM6J07FU Datasheet
146Kb / 5P
TOSHIBA Transistor Silicon P Channel MOS Type
MP4411 TOSHIBA-MP4411 Datasheet
194Kb / 7P
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
MP4203 TOSHIBA-MP4203 Datasheet
223Kb / 4P
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
MP6801 TOSHIBA-MP6801 Datasheet
498Kb / 9P
TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
TPCP8401 TOSHIBA-TPCP8401_07 Datasheet
279Kb / 10P
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com