Uniform Sector

Standard and Dual Serial Flash

GD25WD80C

25

8. ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Figure19. Power-On Timing Sequence Diagram

Table 3. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min.

Max.

Unit

tVSL

VCC(min.)to device operation

0.3

ms

VWI

Write Inhibit Voltage

1

1.55

V

VPWD

VCC voltage needed to below VPWD for ensuring initialization will occur

0.5

V

tPWD

The minimum duration for ensuring initialization will occur

300

us

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register

contains 00H (all Status Register bits are 0).

8.3. ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

-40 to 105

-40 to 125

℃

Storage Temperature

-65 to 150

℃

Applied Input/Output Voltage

-0.6 to VCC+0.4

V

Transient Input/Output Voltage (note: overshoot)

-2.0 to VCC+2.0

V

VCC

-0.6 to 4.2

V

VCC(max.)

VCC(min.)

tVSL

Chip Selection is not allowed

Full Device

Access

Allowed

Time

tPWD

VCC