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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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GD25WD80C 数据表(PDF) 32 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25WD80C 数据表(HTML) 32 Page - GigaDevice Semiconductor (Beijing) Inc. |
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32 / 47 page  Uniform Sector Standard and Dual Serial Flash GD25WD80C 32 (T= -40℃~105℃, VCC=1.65~3.6V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit. fC1 Serial Clock Frequency For: Fast read (0BH), on 3.0 – 3.6V power supply 100 MHz fC2 Serial Clock Frequency For: Fast read (0BH), on 2.1 – 3.0V power supply 70 MHz fC3 Serial Clock Frequency For: Fast read (0BH), on 1.65 – 2.1V power supply 50 MHz fR1 Serial Clock Frequency For: Read (03H), Dual Output (3BH), on 3.0 – 3.6V power supply 80 MHz fR2 Serial Clock Frequency For: Read (03H), Dual Output (3BH), on 2.1 – 3.0V power supply 60 MHz fR3 Serial Clock Frequency For: Read (03H), Dual Output (3BH), on 1.65 – 2.1V power supply 40 MHz tCLH1 Serial Clock High Time for 2.1 – 3.6V Power Supply 4 ns tCLH2 Serial Clock High Time for 1.65 – 2.1V Power Supply 8 ns tCLL1 Serial Clock Low Time for 2.1 – 3.6V Power Supply 4 ns tCLL2 Serial Clock Low Time for 1.65 – 2.1V Power Supply 8 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns tSLCH CS# Active Setup Time 10 ns tCHSH CS# Active Hold Time 10 ns tSHCH CS# Not Active Setup Time 10 ns tCHSL CS# Not Active Hold Time 10 ns tSHSL CS# High Time (Read/Write) 40 ns tSHQZ Output Disable Time 12 ns tCLQX Output Hold Time 0 ns tDVCH Data In Setup Time 4 ns tCHDX Data In Hold Time 4 ns tCLQV Clock Low To Output Valid 12 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP CS# High To Deep Power-Down Mode 0.1 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 0.1 μs tRES2 CS# High To Standby Mode With Electronic Signature Read 0.1 μs tW Write Status Register Cycle Time 5 40 ms tBP1 Byte Program Time (First Byte) 40 110 μs tBP2 Addition Byte Program Time (After First Byte) 5 12 μs tPP Page Programming Time 1.6 6 ms tSE Sector Erase Time 150 550 ms tBE1 Block Erase Time (32K Bytes) 0.5 2.2 s |
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