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GD25VQ127CSFS 数据表(PDF) 43 Page - GigaDevice Semiconductor (Beijing) Inc.

部件名 GD25VQ127CSFS
功能描述  Uniform Sector Dual and Quad Serial Flash
PDF  62 Pages
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制造商  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
网页  http://www.gigadevice.com/
标志 GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25VQ127CSFS 数据表(HTML) 43 Page - GigaDevice Semiconductor (Beijing) Inc.

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Uniform Sector
Dual and Quad Serial Flash
GD25VQ127C
43
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 41. Power-on Timing Sequence Diagram
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table 8.1. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
2.5
ms
VWI
Write Inhibit Voltage
1.5
2.2
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
bits are set to 0, except DRV1 bit (S22) is set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
Storage Temperature
-65 to 150
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage(note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.0
V
Figure 42. Maximum Negative/positive Overshoot Diagram
Vss
20ns
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
20ns
20ns
Vss-2.0V
Vcc
20ns
20ns
20ns
Vcc + 2.0V



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