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GD25VQ127CSFS 数据表(PDF) 48 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25VQ127CSFS 数据表(HTML) 48 Page - GigaDevice Semiconductor (Beijing) Inc. |
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48 / 62 page ![]() Uniform Sector Dual and Quad Serial Flash GD25VQ127C 48 tW Write Status Register Cycle Time 5 30 ms tBP1 Byte Program Time (First Byte) 30 50 μs tBP2 Additional Byte Program Time (After First Byte) 2.5 12 μs tPP Page Programming Time 0.6 2.4 ms tSE1 Sector Erase Time 50 400 ms tBE2 Block Erase Time (32K Bytes) 0.2 1.0 s tBE Block Erase Time (64K Bytes) 0.3 1.2 s tCE Chip Erase Time (GD25VQ127C) 60 120 s Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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